AOC2802
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
SS
=10V
I
S
=6A
Capacitance (pF)
1400
1200
1000
800
C
rss
600
C
oss
400
200
0
0
10
15
V
SS
(Volts)
Figure 8: Capacitance Characteristics
5
20
C
oss
C
rss
C
iss
V
GS
(Volts)
100.0
10µs
10.0
I
S
(Amps)
50
40
Power (W)
R
SS(ON)
limited
100µs
30
20
10
0
0.01
0.1
1
V
SS
(Volts)
10
100
0.001
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
0.1
T
J(Max)
=150°C
T
A
=25°C
1.0
DC
0.1
T
J(Max)
=150°C
T
A
=25°C
1ms
10ms
100ms
1s
0.0
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/(T
on
+T)
T
J,PK
=T
A
+P
D
.Z
θJA
.R
θJA
R
θJA
=100°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Note 2.
PW <300
µs
pulses, duty cycle 0.5% max
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
T
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
0.001
100
1000
4/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
