AOC2802
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
S
=250µA, V
GS
=0V, Test Circuit 6
V
SS
=20V, V
GS
=0V, Test Circuit 1
C
T
J
=55°
V
SS
=0V, V
GS
= ±10V, Test Circuit 2
V
SS
=0V, I
G
=±250µA, Test Circuit 7
V
SS
=V
GS
I
S
=250µA, Test Circuit 3
V
GS
=4.5V, I
S
=3A, Test Circuit 4
R
SS(ON)
Static Source to Source On-Resistance
Note
Min
20
Typ
Max
Units
V
STATIC PARAMETERS
Source-Source Breakdown Voltage
BV
SSS
I
SSS
I
GSS
BV
GSO
V
GS(th)
Zero Gate Voltage Source Current
Gate leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
1
5
1
±12
0.5
C
T
J
=125°
1
28
41
30
36
45
19
0.6
1000
1
1200
1.5
34
48
35
43
54
S
V
pF
pF
pF
kΩ
ns
ns
µs
µs
nC
mΩ
10
V
V
µA
V
GS
=4.0V, I
S
=3A, Test Circuit 4
V
GS
=3.1V, I
S
=3A, Test Circuit 4
V
GS
=2.5V, I
S
=3A, Test Circuit 4
g
FS
V
FSS
Forward Transconductance
Diode Forward Voltage
Note
Note
V
SS
=5V, I
S
=3A, Test Circuit 3
I
S
=1A,V
GS
=0V, Test Circuit 5
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
SS
=0V, f=1MHz
V
GS
=0V, V
SS
=10V, f=1MHz,
152
114
1.5
284
SWITCHING PARAMETERS
t
D(on)
Turn-On DelayTime
t
r
t
D(off)
t
f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V
G1S1
=4.5V, V
SS
=10V, I
S
=6A
V
GS
=10V, V
SS
=10V, R
L
=1.5Ω, R
GEN
=6Ω
,
900
5
4.8
10.4
Total Gate Charge
Q
g
Note: Pulsed
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE
2/5
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
