AOC2802
Common-Drain Dual N-Channel Enhancement
Mode Field Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
4V
50
40
I
S
(A)
30
20
10
0
0
1
2
3
4
5
V
SS
(Volts)
Fig 1: On-Region Characteristics
65
Normalized On-Resistance
60
55
R
SS(ON)
(mΩ)
Ω
50
45
40
35
30
25
0
5
10
15
20
I
S
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=3.1V
V
GS
=4V
V
GS
=2.5V
V
GS
=2V
4
75°C
25°
0
0.5
0.75
1
1.25
1.5
1.75
2
2.25
V
GS
(Volts)
Figure 2: Transfer Characteristics
2.5V
3V
12
I
S
(A)
4.5V
3.5V
16
V
SS
=5V
20
8
125°C
-
1.6
V
GS
=4.5V
1.4
V
GS
=2.5V
1.2
V
GS
=4V
V
GS
=3.1V
1
V
GS
=4.5V
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
90
80
R
SS(ON)
(mΩ)
Ω
70
I
S
(A)
I
S
=3A
1.0E+01
1.0E+00
1.0E-01
125°C
1.0E-02
1.0E-03
1.0E-04
25°C
1.0E-05
-25°C
0
2
4
6
8
10
12
1.0E-06
0.0
0.5
1.0
1.5
2.0
V
SS
(Volts)
Figure 6: Body-Diode Characteristics
75°C
25°C
125°C
Note 2.
60
<300
µs
pulses, duty cycle 0.5% max
PW
50
40
30
20
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/5
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