AOT11S65/AOB11S65/AOTF11S65
650V 11A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
125°C
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
3
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
C
iss
Eoss(uJ)
0
0
4
8
12
16
20
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
6
5
4
3
2
1
0
0
100
200
300
400
500
600
0
100
200
300
400
500
600
V
DS
(Volts)
Figure 10: Coss stored Energy
100
R
DS(ON)
limited
R
DS(ON)
limited
E
oss
25°C
V
GS
(Volts)
9
15
12
V
DS
=480V
I
D
=5.5A
6
1000
Capacitance (pF)
100
C
oss
10
C
rss
1
0
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
10
I
D
(Amps)
10µs
100µs
10
I
D
(Amps)
10µs
100µs
1
DC
1ms
10ms
1
DC
1ms
10ms
0.1s
1s
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
V
DS
(Volts)
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT(B)11S65 (Note F)
100
1000
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
V
DS
(Volts)
100
1000
Figure 12: Maximum Forward Biased Safe Operating
Area for AOTF11S65(Note F)
4/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
