AOT11S65/AOB11S65/AOTF11S65
650V 11A
α
MOS
TM
Power Transistor
General Description
The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced
αMOS
TM
high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
750V
45A
0.399Ω
13.2nC
2.9µJ
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
AOT11S65/AOB11S65
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
AOTF11S65
650
±30
11*
8*
45
2
60
120
AOTF11S65L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
AOT11S65/AOB11S65
65
0.5
0.63
198
1.6
11
8
11*
8*
A
A
mJ
mJ
31
0.25
W
W/ C
V/ns
°
C
°
C
AOTF11S65L
65
--
4
Units
°
C/W
°
C/W
°
C/W
o
Repetitive avalanche energy
Single pulsed avalanche energy
G
C
T
C
=25°
Power Dissipation
B
Derate above 25
o
C
MOSFET dv/dt ruggedness
H
Peak diode recovery dv/dt
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
A,D
39
0.31
100
20
-55 to 150
300
AOTF11S65
65
--
3.25
R
θCS
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
