AOT11S65/AOB11S65/AOTF11S65
650V 11A
α
MOS
TM
Power Transistor
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
STATIC PARAMETERS
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
V
SD
I
S
I
SM
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
Maximum Body-Diode Pulsed Current
C
Parameter
Conditions
I
D
=250µA, V
GS
=0V, T
J
=25°
C
C
I
D
=250µA, V
GS
=0V, T
J
=150°
V
DS
=650V, V
GS
=0V
V
DS
=520V, T
J
=150°
C
V
DS
=0V, V
GS
=±30V
V
DS
=5V,I
D
=250µA
V
GS
=10V, I
D
=5.5A, T
J
=25°
C
V
GS
=10V, I
D
=5.5A, T
J
=150°
C
I
S
=5.5A,V
GS
=0V, T
J
=25°
C
Min
650
700
-
-
-
2.6
-
-
-
-
-
-
-
-
Typ
-
750
-
10
-
3.3
0.35
0.98
0.82
-
-
646
42
33
117
1.1
18
13.2
3.2
4.3
25
20
77
19
278
22
4.2
Max
-
-
1
-
±100
4
0.399
1.11
-
11
45
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Units
V
µA
nΑ
V
Ω
Ω
V
A
A
pF
pF
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
A
µC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
C
iss
C
oss
C
o(er)
C
o(tr)
C
rss
R
g
Output Capacitance
Effective output capacitance, energy
related
H
Effective output capacitance, time
related
I
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0 to 480V, f=1MHz
-
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
-
-
-
V
GS
=10V, V
DS
=480V, I
D
=5.5A
-
-
-
V
GS
=10V, V
DS
=400V, I
D
=5.5A,
R
G
=25Ω
I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
-
-
-
-
-
-
SWITCHING PARAMETERS
Total Gate Charge
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
I
rm
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Peak Reverse Recovery Current
Body Diode Reverse Recovery Charge I
F
=5.5A,dI/dt=100A/µs,V
DS
=400V
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°
C.
B. The power dissipation P
D
is based on T
J(MAX)
=150° using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
C,
limit for cases where additional heatsinking is used.
C,
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150° Ratings are based on low frequency and duty cycles to keep initial T
J
=25°
C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150° The SOA curve provides a single pulse ratin g.
C.
G. L=60mH, I
AS
=2A, V
DD
=150V, Starting T
J
=25°
C
H. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
I. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. Wavesoldering only allowed at leads.
2/7
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