AO9926C
20V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1000
V
DS
=10V
I
D
=7.6A
8
Capacitance (pF)
800
C
iss
V
GS
(Volts)
6
600
4
400
C
oss
200
2
0
0
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
15
0
0
C
rss
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
100.0
10000
T
A
=25°C
10.0
I
D
(Amps)
100µs
1ms
Power (W)
R
DS(ON)
limited
10µs
1000
1.0
100
0.1
T
J(Max)
=150°C
T
A
=25°C
10ms
10s
DC
10
1
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
R
θJA
=90°C/W
0.1
0.01
P
D
Single Pulse
T
on
0.001
0.00001
0.0001
0.001
0.01
0.1
1
T
100
1000
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/5
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