AO9926C 参数 Datasheet PDF下载

AO9926C

20V Dual N-Channel MOSFET

C

Electrical Characteristics (T

J

=25° unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=20V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±12V

V

DS

=V

GS

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=7.6A

C

T

J

=125°

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

=4.5V, I

D

=7A

V

GS

=2.5V, I

D

=6A

V

GS

=1.8V, I

D

=2A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=5V, I

D

=7.6A

I

S

=1A,V

GS

=0V

0.4

38

16.5

25

18.5

24

32

25

0.7

1

2.5

420

V

GS

=0V, V

DS

=15V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

65

45

0.8

525

95

75

1.7

12.5

V

GS

=10V, V

DS

=15V, I

D

=7.6A

6

1

630

125

105

2.6

23

30

26

34

52

0.75

Min

20

1

5

±100

1.1

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=7.6A, dI/dt=100A/µs

Body Diode Reverse Recovery Charge I

F

=7.6A, dI/dt=100A/µs

V

GS

=10V, V

DS

=15V, R

L

=1.3Ω,

R

GEN

=3Ω

2

3

7.5

20

6

14

6

nC

ns

ns

ns

ns

ns

nC

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using

≤

10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

2/5

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