AO9926C
20V Dual N-Channel MOSFET
General Description
The AO9926C uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating. This device is suitable for use as a uni-
directional or bi-directional load switch.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=4.5V)
R
DS(ON)
(at V
GS
=2.5V)
R
DS(ON)
(at V
GS
=1.8V)
20V
7.6A
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
SOIC-8
D1
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
S1
G2
S2
D2
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
B
C
Maximum
20
±12
7.6
6.1
38
2
1.28
-55 to 150
Units
V
V
A
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
AD
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
