欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO8830 参数 Datasheet PDF下载

AO8830图片预览
型号: AO8830
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N沟道增强型场效应晶体管 [Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 435 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
 浏览型号AO8830的Datasheet PDF文件第1页浏览型号AO8830的Datasheet PDF文件第2页浏览型号AO8830的Datasheet PDF文件第3页浏览型号AO8830的Datasheet PDF文件第5页  
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
400
V
DS
=10V
I
D
=6A
Capacitance (pF
)
C
iss
300
5
4
V
GS
(Volt
s)
3
2
1
0
0
1
2
3
4
5
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
200
C
oss
100
C
rss
0
0
5
10
15
20
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
T
J(Max)
=150°C, T
A
=25°C
10µs
Power (W)
30
25
20
15
10
5
0
0.001
T
J(Max)
=150°C
T
A
=25°C
10
I
D
(Amps)
1ms
1
R
DS(ON)
limited
0.1
0.1
1
DC
10s
10
100
10ms
100ms
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θJA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=83°C/W
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.01
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/5
www.freescale.net.cn