AO8830 参数 Datasheet PDF下载

AO8830

Common-Drain Dual N-Channel Enhancement

Mode Field Effect Transistor

General Description

The AO8830/L uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and

operation with gate voltages as low as 1.8V while retaining a 12V V

GS(MAX)

rating. This device is suitable

for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration.

AO8830 and AO8830L are electrically identical.

-RoHs Compliant

-AO8830L is Halogen Free

Features

V

DS

(V) = 20V

I

D

= 6 A (V

GS

= 10V)

R

DS(ON)

< 27mΩ (V

GS

= 10V)

R

DS(ON)

< 30mΩ (V

GS

= 4.5V)

R

DS(ON)

< 37mΩ (V

GS

= 3.1V)

R

DS(ON)

< 41mΩ (V

GS

= 2.5V)

R

DS(ON)

< 55mΩ (V

GS

= 1.8V)

D1/D2

S1

S1

G1

TSSOP-8

Top View

1

2

3

4

8

7

6

5

D1/D2

S2

S2

G2

G1

1.6K

G2

D1

D2

1.6K

S1

S2

Absolute Maximum Ratings T

A

=25°C unless otherwise noted

Parameter

Symbol

V

DS

Drain-Source Voltage

V

GS

Gate-Source Voltage

Continuous Drain

Current

A

Pulsed Drain Current

B

T

A

=25°C

Power Dissipation

A

Maximum

20

±12

6

4.8

30

1.5

0.94

-55 to 150

Units

V

V

A

T

A

=25°C

T

A

=70°C

I

D

I

DM

P

D

T

J

, T

STG

T

A

=70°C

W

°C

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient

A

Maximum Junction-to-Ambient

A

Maximum Junction-to-Lead

C

Symbol

t

≤

10s

Steady-State

Steady-State

R

θJA

R

θJL

Typ

64

115

70

Max

83

140

85

Units

°C/W

°C/W

°C/W

1/5

www.freescale.net.cn