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AO8830 参数 Datasheet PDF下载

AO8830图片预览
型号: AO8830
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N沟道增强型场效应晶体管 [Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 5 页 / 435 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10V
30
3V
4V
20
I
D
(A)
I
D
(A)
V
GS
=2V
25
20
15
10
5
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Regions Characteristi
cs
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
V
GS
=5V
25°C
125°C
10
V
GS
=1.5V
60
50
R
DS(ON)
(m
)
40
30
20
10
0
0
5
10
15
20
I
D(
A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=4.5V
V
GS
=10V
Normalize ON-Resistance
V
GS
=1.8V
V
GS
=2.5V
1.6
V
GS
=2.5V
1.4
1.2
I
D
=4A
V
GS
=4.5V
I
D
=5A
V
GS
=10V
1.0
0.8
0.6
-50
0
50
100
150
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
V
GS
=1.8V
I
D
=2A
I
D
=6A
80
70
60
R
DS(ON)
(m
)
I
S
(A)
50
40
30
20
10
0
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
125°C
I
D
=6A
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
3/5
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