AO8807
Dual P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
3.5
-V
GS
(Volts)
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100
10µs
10
I
D
(Amps)
Power (W)
R
DS(ON)
limited
60
100µs
1ms
10s
0
T
J(Max)
=150°C
T
A
=25°C
0
0.01
0.1
DC
0
0.0001
0.1s
1s
80
T
J(Max)
=150°C
T
A
=25°C
V
DS
=-6V
I
D
=-6.5A
Capacitance (pF)
2800
2400
2000
1600
1200
800
400
0
0
2
4
6
8
10
12
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
C
rss
C
iss
1
40
20
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
0.00001
P
D
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
4/5
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