AO8807
Dual P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
50
40
-I
D
(A)
30
20
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics(Note E)
45
Normalized On-Resistance
40
35
R
DS(ON)
(m
Ω
)
30
25
20
15
V
GS
=-4.5V
10
0
2
4
6
8
10
12
14
16
18
20
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage(Note E)
50
45
40
R
DS(ON)
(m
Ω
)
35
-I
S
(A)
30
25
20
15
10
0
2
4
6
8
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source
Voltage(Note E)
1E-04
25°C
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics(Note E)
125°C
1E-01
25°C
1E-02
1E-03
I
D
=-6.5A
1E+01
1E+00
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature(Note E)
V
GS
=-2.5V
V
GS
=-1.5V
V
GS
=-1.8V
1.6
I
D
=-6A, V
GS
=-2.5V
1.4
I
D
=-6.5A, V
GS
=-4.5V
V
GS
=-1.5V
-4.5V
-3V
-2V
-I
D
(A)
30
20
10
0
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics(Note E)
-2.5V
60
V
DS
=-5V
50
40
125°C
25°C
1.2
I
D
=-5A, V
GS
=-1.5V
1.0
I
D
=-5.5A, V
GS
=-1.8V
125°C
3/5
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