AO8807 参数 Datasheet PDF下载

AO8807

Dual P-Channel Enhancement Mode Field

Effect Transistor

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-12V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±8V

V

DS

=V

GS

I

D

=-250µA

V

GS

=-4.5V, V

DS

=-5V

V

GS

=-4.5V, I

D

=-6.5A

T

J

=125°C

R

DS(ON)

Static Drain-Source On-Resistance

V

GS

=-2.5V, I

D

=-6A

V

GS

=-1.8V, I

D

=-5.5A

V

GS

=-1.5V, I

D

=-5A

g

FS

V

SD

I

S

Forward Transconductance

V

DS

=-5V, I

D

=-6.5A

Diode Forward Voltage

I

S

=-1A,V

GS

=0V

Maximum Body-Diode Continuous Current

-0.35

-60

16

23

19

23

28

45

-0.56

-1

-1.4

1740

V

GS

=0V, V

DS

=-6V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

334

200

1.3

19

V

GS

=-4.5V, V

DS

=-6V, I

D

=-6.5A

4.5

5.3

240

V

GS

=-4.5V, V

DS

=-6V, R

L

=0.9Ω,

R

GEN

=3Ω

I

F

=-6.5A, dI/dt=100A/µs

580

7

4.2

22

17

27

1.7

23

2100

20

28

24

30

36

-0.53

Min

-12

-1

-5

±10

-0.85

A

mΩ

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

kΩ

nC

nC

nC

ns

ns

µs

µs

ns

nC

Typ

Max

Units

V

µA

µA

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Gate Source Charge

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Drain Charge

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-6.5A, dI/dt=100A/µs

A: The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The value

in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using

≤

10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

2/5

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