AO5803E
Dual P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-0.6A
Capacitance (pF)
100
C
iss
80
4
-V
GS
(Volts)
3
60
2
40
C
oss
20
C
rss
1
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
10.00
T
J(Max)
=150°C, T
A
=25°C
10µs
1.00
-I
D
(Amps)
1ms
10ms
0.1s
0.10
R
DS(ON)
limited
1s
10s
0.01
DC
100µs
Power (W)
14
12
10
8
6
4
2
T
J(Max)
=150°C
T
A
=25°C
0.00
0.1
1
-V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=330°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/5
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