AO5803E
Dual P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO5803E/L uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge, and
operation with gate voltages as low as 1.8V, in the small SC89-6L footprint. It can be used as load
switching, and wide variety of FET applications. AO5803E and AO5803EL are electrically identical.
-RoHS compliant
-AO5803EL is Halogen Free
Features
V
DS
(V) = -20V
I
D
= -0.6A (V
GS
= -4.5V)
R
DS(ON)
< 0.8Ω (V
GS
= -4.5V)
R
DS(ON)
< 1.0Ω (V
GS
= -2.5V)
R
DS(ON)
< 1.25Ω (V
GS
= -1.8V)
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
A, F
Current
Pulsed Drain Current
Power Dissipation
A
B
Maximum
-20
±8
-0.6
-0.4
-3
0.4
0.24
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
275
360
300
Max
330
450
350
Units
°
C/W
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
