AO5803E
Dual P-Channel Enhancement Mode Field
Effect Transistor
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BV
DSS
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Conditions
I
D
=-250µA, V
GS
=0V
V
DS
=-20V, V
GS
=0V
C
T
J
=55°
V
DS
=0V, V
GS
=±4.5V
V
DS
=V
GS
I
D
=-250µA
V
GS
=-4.5V, V
DS
=-5V
V
GS
=-4.5V, I
D
=-0.6A
R
DS(ON)
Static Drain-Source On-Resistance
C
T
J
=125°
V
GS
=-2.5V, I
D
=-0.5A
V
GS
=-1.8V, I
D
=-0.4A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=-5V, I
D
=-0.6A
I
S
=-0.1A,V
GS
=0V
-0.4
-3
0.62
0.87
0.79
0.96
0.9
-0.81
-1
-0.5
72
V
GS
=0V, V
DS
=-10V, f=1MHz
17
9
60.5
V
GS
=-4.5V, V
DS
=-10V, R
L
=16.7Ω,
R
GEN
=3Ω
I
F
=-0.6A, dI/dt=100A/µs, V
GS
=-9V
150
612
436
27
8.3
35
100
0.8
1.1
1
1.25
-0.5
Min
-20
-1
-5
±1
-0.9
Typ
Max
Units
V
µA
µA
V
A
Ω
Ω
Ω
S
V
A
pF
pF
pF
ns
ns
ns
ns
ns
nC
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
t
D(on)
Turn-On DelayTime
t
r
t
D(off)
t
f
t
rr
Q
rr
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=-0.6A, dI/dt=100A/µs, V
GS
=-9V
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t
≤
10s thermal resistance rating.
Rev 4: July 2011
2/5
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