AO4852
60V Dual N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
V
GS
(Volts)
6
4
2
0
0
1
2
3
4
5
6
7
8
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
DS
=30V
I
D
=3A
Capacitance (pF)
600
500
400
300
200
C
oss
100
0
0
C
rss
10
20
30
40
50
60
C
iss
V
DS
(Volts)
Figure 8: Capacitance Characteristics
100.0
R
DS(ON)
limited
10µs
Power (W)
35
30
T
J(Max)
=150°C
T
A
=25°C
10.0
I
D
(Amps)
1ms
10ms
0.1s
100µs
25
20
15
10
1.0
T
J(Max)
=150°C
T
A
=25°C
0.1
0.1
1
1s
10s
DC
10
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
5
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
Single Pulse
0.01
0.00001
P
D
T
on
T
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/4
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