欢迎访问ic37.com |
会员登录 免费注册
发布采购

AO4852 参数 Datasheet PDF下载

AO4852图片预览
型号: AO4852
PDF下载: 下载PDF文件 查看货源
内容描述: 60V双N沟道MOSFET [60V Dual N-Channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 408 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
 浏览型号AO4852的Datasheet PDF文件第1页浏览型号AO4852的Datasheet PDF文件第3页浏览型号AO4852的Datasheet PDF文件第4页  
AO4852
60V Dual N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Parameter
Symbol
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
R
DS(ON)
g
FS
V
SD
I
SM
I
S
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=2A
Forward Transconductance
Diode Forward Voltage
Pulsed Body-Diode Current
B
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=60V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
= ±20V
V
DS
=V
GS
I
D
=250µA
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=3A
T
J
=125°
C
V
DS
=5V, I
D
=3A
I
S
=1A,V
GS
=0V
Min
60
Typ
Max
Units
V
1
5
100
1.7
20
79
146
86
15
0.8
1
20
2.5
372
450
90
159
105
2.3
2.6
µA
nA
V
A
mΩ
mΩ
S
V
A
A
pF
pF
pF
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
V
GS
=0V, V
DS
=30V, f=1MHz
31
17
1.7
7.1
2.6
9.2
nC
nC
nC
nC
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
I
F
=3A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge I
F
=3A, dI/dt=100A/µs
V
GS
=10V, V
DS
=30V, R
L
=10Ω,
R
GEN
=3Ω
V
GS
=10V, V
DS
=30V, I
D
=3A
3.6
1
2
4.1
2.1
15
2.1
23.4
23.2
29
5.3
ns
ns
ns
ns
ns
nC
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The
C.
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
curve provides a single pulse rating.
Rev1: Nov. 2010
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
2/4
www.freescale.net.cn