AO4852
60V Dual N-Channel MOSFET
General Description
The AO4852 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. As a pair
these MOSFETs operate very efficiently in Push Pull and Bridge topologies.
Features
V
DS
(V) = 60V
(V
GS
= 10V)
I
D
= 3.5A
R
DS(ON)
<90mΩ (V
GS
= 10V)
R
DS(ON)
<105mΩ (V
GS
= 4.5V)
SOIC-8
D1
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
B
Symbol
V
DS
V
GS
T
A
=25°
C
C
T
A
=70°
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
P
D
I
AR
E
AR
T
J
, T
STG
Maximum
10 Sec
Steady State
60
±20
3.5
2.8
20
2
1.3
8
9.6
-55 to 150
1.4
0.9
3
2.4
Units
V
V
A
W
A
mJ
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Lead
C
Steady-State
Symbol
R
θJA
R
θJL
Typ
48
74
33
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
