AO4706
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E-01
0.9
0.8
1.0E-02
VDS=24V
V
SD
(V)
1.0E-03
I
R
(A)
VDS=12V
0.7
0.6
0.5
0.4
0.3
0.2
1.0E-05
0.1
0
100
150
200
Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature
60
50
40
Q
rr
(nC)
30
Qrr
20
Irm
10
0
0
5
10
15
20
25
30
Is (A)
Figure 14: Diode Reverse Recovery Charge and
Peak Current vs. Conduction Current
25ºC
di/dt=1000A/us
125ºC
15
25ºC
125ºC
12
trr (ns)
Irm (A)
9
6
3
0
3
0
0
5
10
15
20
25
30
Is (A)
Figure 15: Diode Reverse Recovery Time and
Soft Coefficient vs. Conduction Current
S
125ºC
0
12
9
6
25ºC
0.5
18
0
50
0
100
150
200
Temperature (°C)
Figure 13: Diode Forward voltage vs. Junction
Temperature
2.5
di/dt=1000A/us
125ºC
2
1.5
1
S
2.5
125ºC
Is=20A
25ºC
2
1.5
trr
S
125ºC
1
0.5
1000
0
1200
50
I
S
=1A
10A
5A
20A
1.0E-04
1.0E-06
15
trr
25ºC
50
45
40
35
Q
rr
(nC)
30
25
20
15
10
5
0
0
200
400
600
800
1000
Irm
Qrr
25ºC
125º
Is=20A
125ºC
25ºC
15
12
9
6
3
0
1200
27
24
21
18
trr (ns)
15
12
9
6
3
0
0
200
400
600
800
25ºC
Irm (A)
di/dt (A)
Figure 16: Diode Reverse Recovery Charge and
Peak Current vs. di/dt
di/dt (A)
Figure 17: Diode Reverse Recovery Time and Soft
Coefficient vs. di/dt
5/6
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