AO4706
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
8
Capacitance (pF)
V
GS
(Volts)
6
4
2
1000
0
0
10
20
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
VGS=15V
I
D
=17A
5000
4000
3000
2000
C
rss
C
oss
C
iss
7000
6000
1000.0
100.0
100µ
I
D
(Amps)
Power (W)
10.0
0.1s
1.0
0.1
0.0
0.1
1
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
100
R
DS(ON)
limited
10ms
DC
1ms
10µs
100
90
80
70
60
50
40
30
T
J(Max)
=150°C
T
A
=25°C
20
10
0
1E-04 0.001
0.01
0.1
1
10
100
1000
T
J(Max)
=150°C
T
A
=25°C
Pulse Width (s)
Figure10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
0.001
0.01
0.1
1
P
D
T
on
0.01
Single Pulse
0.001
0.00001
T
100
1000
0.0001
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4/6
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