AO4622
20V Dual P + N-Channel MOSFET
N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1400
1200
Capacitance (pF)
V
DS
=10V
I
D
=7.3A
C
iss
1000
800
600
400
200
C
rss
0
0
6
Q
g
(nC)
9
12
Figure 7: Gate-Charge Characteristics
3
15
0
0
10
15
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
C
oss
8
V
GS
(Volts)
6
1.4
494
692
593
830
4
2
100.0
10µs
10.0
I
D
(Amps)
1ms
100µ
Power (W)
193
18
50
40
T
J(Max)
=150°C
T
A
=25°C
10ms
1.0
R
DS(ON)
limited
1
10s
0.1
T
J(Max)
=150°C
T
A
=25°C
0.0
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
DC
0.1s
30
20
10
0
0.0001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
0.001
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=62.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4/9
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