AO4622
20V Dual P + N-Channel MOSFET
General Description
The AO4622 uses advanced trench technology MOSFETs to provide excellent R
DS(ON)
and low gate
charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a
host of other applications.
Features
N-Channel
P-Channel
V
DS
(V) = 20V
-20V
I
D
= 7.3A (V
GS
=4.5V)
-5A (V
GS
=-4.5V)
R
DS(ON)
R
DS(ON)
< 23mΩ (V
GS
=10V)
< 53mΩ (V
GS
= -4.5V)
< 30mΩ (V
GS
=4.5V)
< 87mΩ (V
GS
= -2.5V)
< 84mΩ (V
GS
=2.5V)
D1
D2
Top View
S1
G1
S2
G2
D1
D1
D2
D2
G1
S1
G2
S2
n-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V
DS
20
Gate-Source Voltage
Continuous Drain
Current
AF
Pulsed Drain Current
B
T
A
=25°
C
Power Dissipation
Avalanche Current
B
Repetitive avalanche energy 0.3mH
B
p-channel
Max p-channel
-20
±12
-5
-4.2
-25
2
1.44
13
25
-55 to 150
Units
V
V
A
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
T
A
=70°
C
P
D
I
AR
E
AR
T
J
, T
STG
±16
7.3
6.2
35
2
1.44
13
25
-55 to 150
W
A
mJ
°
C
Junction and Storage Temperature Range
Thermal Characteristics: n-channel and p-channel
Parameter
t
≤
10s
Maximum Junction-to-Ambient
A
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
A
t
≤
10s
Maximum Junction-to-Ambient
A
Steady-State
Maximum Junction-to-Ambient
C
Steady-State
Maximum Junction-to-Lead
Symbol
R
θJA
R
θJL
R
θJA
R
θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ
48
74
35
48
74
35
Max
62.5
110
40
62.5
110
40
Units
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
1/9
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
