AO4622
20V Dual P + N-Channel MOSFET
N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
10V
6V
4.5V
25
20
I
D
(A)
15
10
V
GS
=3V
5
30
V
DS
=5V
25°C
-40°C
125°C
50
40
I
D
(A)
3.5V
30
20
10
0
0
1
2
3
4
5
1.4
494
692
593
830
0
1
3
4
V
GS
(Volts)
Figure 2: Transfer Characteristics
2
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
100
90
80
R
DS(ON)
(m
Ω
)
70
60
50
40
30
20
10
0
0
5
10
15
V
GS
=10V
V
GS
=4.5V
V
GS
=2.5V
1.60
Normalized On-Resistance
1.40
193
18
V
GS
=10V, 7.3A
V
GS
=4.5V, 6.4A
1.20
1.00
0.80
0.60
V
GS
=2.5V, 5.5A
20
25
30
-50
-25
0
25
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
59
100 125 150 175
75
142
Temperature (°C)
50
Figure 4: On-Resistance vs. Junction
Temperature
40
35
30
R
DS(ON)
(m
Ω
)
125°C
25
20
25°C
15
10
3
4
5
6
7
8
9
10
I
D
=7.3A
1.E+02
1.E+01
1.E+00
I
S
(A)
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
0.0
0.2
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.4
1.2
25°C
125°C
-40°C
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/9
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