AO4618 参数 Datasheet PDF下载

AO4618

40V Complementary MOSFET

P-Channel Electrical Characteristics (T

J

=25°C unless otherwise noted)

Symbol

Parameter

Conditions

Min

-40

-1

Typ

Max

Units

V

-5

±100

-1.7

-35

19

23

34

30

-1

-2.5

1870

V

GS

=0V, V

DS

=-20V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

2.2

185

155

4.5

32

V

GS

=10V, V

DS

=-20V, I

D

=-7A

8

7.6

6.2

10

V

GS

=10V, V

DS

=-20V, R

L

=3Ω,

R

GEN

=3Ω

18

6.8

45

-1.9

-3

µA

nA

V

A

28

24

26

-0.74

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

R

DS(ON)

g

FS

V

SD

I

S

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

I

D

=-250µA, V

GS

=0V

V

DS

=-40V, V

GS

=0V

T

J

=55°C

V

DS

=0V, V

GS

=±20V

V

DS

=V

GS

I

D

=-250µA

V

GS

=-10V, V

DS

=-5V

V

GS

=-10V, I

D

=-7A

T

J

=125°C

V

GS

=-4.5V, I

D

=-4A

V

DS

=-5V, I

D

=-7A

I

S

=-1A,V

GS

=0V

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

t

D(off)

t

f

t

rr

Q

rr

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

38

24

13

33

ns

ns

ns

nC

I

F

=-7A, dI/dt=500A/µs

Body Diode Reverse Recovery Charge I

F

=-7A, dI/dt=500A/µs

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

value in any given application depends on the user's specific board design.

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using

≤

10s junction-to-ambient thermal resistance.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty cycles to keep

initialT

J

=25°C.

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in

2

FR-4 board with

2oz. Copper, assuming a maximum junction temperature of T

J(MAX)

=150°C. The SOA curve provides a single pulse rating.

6/9

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