AO4618
40V Complementary MOSFET
General Description
The AO4618 uses advanced trench technology to provide excellent R
DS(ON)
and low gate charge. This
complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter application
Features
N-Channel
V
DS
= 40V
I
D
= 8A (V
GS
=10V)
R
DS(ON)
< 19m
< 27m
(V
GS
=10V)
(V
GS
=4.5V)
P-Channel
-40V
-7A (V
GS
=-10V)
R
DS(ON)
< 23m
< 30m
(V
GS
=-10V)
(V
GS
=-4.5V)
s.
D2
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
D1
G2
G1
S2
S1
n-channel
p-channel
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Max n-channel
V
DS
Drain-Source Voltage
40
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Max p-channel
-40
±20
-7
-5.5
-35
-35
61
2
1.3
Units
V
V
A
A
mJ
W
°
C
V
GS
C
T
A
=25°
T
A
=70°
C
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
STG
±20
8
6
40
15
11
2
1.3
-55 to 150
Avalanche energy L=0.1mH
C
T
A
=25°
Power Dissipation
B
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Lead
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJL
Typ
48
74
32
Max
62.5
90
40
Units
°
C/W
°
C/W
°
C/W
1/9
www.freescale.net.cn
SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
