AO4618
40V Complementary MOSFET
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
500
V
DS
=20V
I
D
=8A
8
400
Capacitance (pF)
C
iss
300
V
GS
(Volts)
6
4
200
C
oss
100
2
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
0
0
C
rss
15
20
25
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
100.0
1000
T
A
=25°C
10.0
R
DS(ON)
limited
10µs
I
D
(Amps)
100µs
1.0
1ms
10ms
0.1
Power (W)
100
10
T
J(Max)
=150°C
T
A
=25°C
DC
10s
0.0
0.01
0.1
1
V
DS
(Volts)
10
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
R
θJA
=90°C/W
0.1
0.01
P
D
T
on
T
100
1000
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
0.001
4/9
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