AO4496
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
= 15V
I
D
= 10A
8
Capacitance (pF)
V
GS
(Volts)
600
C
iss
800
6
400
4
2
200
C
rss
C
oss
0
0
2
4
6
8
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1000
10µs
10
I
D
(Amps)
100µs
T
J(Max)
=150°C
T
A
=25°C
1
R
DS(ON)
limited
1ms
10ms
100mss
10s
Power (W)
100
10
0.1
T
J(Max)
=150°C
T
A
=25°C
0.01
0.1
1
10
DC
I
F
=-6.5A, dI/dt=100A/µs
100
V
DS
(Volts)
1
0.0001
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
0.01
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
P
D
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
0.001
100
1000
4/5
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