AO4496
30V N-Channel MOSFET
General Description
The AO4496 uses advanced trench technology to provide excellent R
DS(ON)
with low gate charge. This
device is suitable for use as a DC-DC converter application.
Features
V
DS
(V) = 30V
I
D
= 10A
R
DS(ON)
< 19.5mΩ
R
DS(ON)
< 26mΩ
(V
GS
= 10V)
(V
GS
= 10V)
(V
GS
= 4.5V)
D
G
S
Absolute Maximum Ratings T
J
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
A
Pulsed Drain Current
Avalanche Current
G
Repetitive avalanche energy L=0.1mH
T
A
=25°C
Power Dissipation
A
T
A
=70°C
G
B
Maximum
30
±20
10
7.5
50
17
14
3.1
2.0
-55 to 150
Units
V
V
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
STG
A
mJ
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
C
Symbol
t
≤
10s
Steady State
Steady State
R
θJA
R
θJL
Typ
31
59
16
Max
40
75
24
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
