AO4496
30V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
10V
40
4.5V
4V
40
50
V
DS
= 5V
30
I
D
(A)
3.5V
20
V
GS
= 3V
I
D
(A)
30
20
125°C
10
25°C
10
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
26
24
R
DS(ON)
(mΩ)
Ω
22
20
18
16
14
0
5
10
V
GS
= 4.5V
Normalized On-Resistance
On
0
1
2
3
4
5
V
GS
(Volts)
Figure 2: Transfer Characteristics
1.8
V
GS
= 10V
I
D
= 10A
1.6
1.4
V
GS
= 4.5V
I
D
= 7.5A
1.2
V
GS
= 10V
1.0
I =-6.5A, dI/dt=100A/µs
15
F
20
25
30
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
50
45
40
R
DS(ON)
(mΩ)
Ω
35
30
25
20
15
1E-05
10
2
4
6
8
10
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°C
I
S
(A)
125°C
I
D
= 10A
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
25°C
125°C
3/5
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