AO4484
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
= 20V
I
D
= 10A
8
Capacitance (pF)
V
GS
(Volts)
2500
2000
C
iss
6
1500
4
1000
2
500
C
rss
C
oss
0
0
5
10
15
20
25
30
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
10
20
30
40
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1000
100
10µs
10
1
0.1
0.01
0.1
1
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100µs
1m
10ms
100ms
10s
DC
1000
T
J(Max)
=150°C
T
A
=25°C
Power (W)
100
I
D
(Amps)
10
I
F
=-6.5A, dI/dt=100A/µs
10
100
V
DS
(Volts)
1
0.0001
0.01
1
100
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note E)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
4/4
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