AO4484
40V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
120
10V
100
80
60
I
D
(A)
60
40
20
V
GS
= 3V
0
0
1
2
3
4
5
V
DS
(Volts)
Figure 1: On-Region Characteristics
16
14
R
DS(ON)
(m
Ω
)
12
V
GS
= 4.5V
10
8
6
4
0
5
10
Normalized On-Resistance
1.8
V
GS
= 10V
I
D
= 10A
V
GS
= 4.5V
I
D
=8A
0
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
4V
4.5V
80
100
V
DS
= 5V
40
3.5V
20
25°C
125°C
1.6
1.4
1.2
V
GS
= 10V
1.0
0.8
I
F
=-6.5A, dI/dt=100A/µs
15
20
0
25
50
75
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
25
I
D
= 10A
1E+02
1E+01
20
R
DS(ON)
(m
Ω
)
I
S
(A)
1E+00
1E-01
125°C
1E-02
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
1E-03
10
25°C
25°C
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1E-04
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
5
2
4
6
8
10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
1E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
15
125°C
3/4
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