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AO4484 参数 Datasheet PDF下载

AO4484图片预览
型号: AO4484
PDF下载: 下载PDF文件 查看货源
内容描述: 40V N沟道MOSFET [40V N-Channel MOSFET]
分类和应用:
文件页数/大小: 4 页 / 370 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AO4484
40V N-Channel MOSFET
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
= 250µA, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V
T
J
= 55°
C
V
DS
= 0V, V
GS
= ±20V
V
DS
= V
GS
I
D
= 250µA
V
GS
= 10V, V
DS
= 5V
V
GS
= 10V, I
D
= 10A
R
DS(ON)
g
FS
V
SD
I
S
Static Drain-Source On-Resistance
V
GS
= 4.5V, I
D
= 8A
Forward Transconductance
Diode Forward Voltage
V
DS
= 5V, I
D
= 10A
I
S
= 1A,V
GS
= 0V
T
J
=125°
C
1.7
120
8.2
12.5
10
75
0.72
1
2.5
1500
V
GS
=0V, V
DS
=20V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
2
215
135
3.5
27.2
V
GS
=10V, V
DS
=20V, I
D
=10A
13.6
4.5
6.4
6.4
V
GS
=10V, V
DS
=20V, R
L
= 2Ω,
R
GEN
=3Ω
I
F
=10A, dI/dt=100A/µs
17.2
29.6
16.8
30
19
40
5
37
18
1950
10
16
12.5
S
V
A
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
mΩ
2.2
Min
40
1
5
±100
3
Typ
Max
Units
V
µA
nA
V
A
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(10V) Total Gate Charge
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=10A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
= 25° The
C.
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using t
300µs pulses, duty cycle 0.5% max.
C.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
curve provides a single pulse rating.
0
F. The current rating is based on the t
10s thermal resistance rating.
G. E
AR
and I
AR
ratings are based on low frequency and duty cycles to keep T
j
=25C.
Rev1: Nov. 2010
2/4
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