SFS4410
Fig 2. Transfer Characteristics
Fig 1. On-State Characteristics
VGS
Top :
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
101
100
10-1
4.0 V
3.5 V
Bottom : 3.0 V
101
150oC
25oC
-55oC
※ Notes :
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
1. VDS = 15V
2. 250µ s Pulse Test
100
10-1
100
0
2
4
6
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
30
20
10
0
101
100
10-1
VGS = 4.5V
VGS = 10V
150℃
25℃
※ Notes :
1. VGS = 0V
※ Note : T = 25℃
2. 250µ s Pulse Test
J
0
10
20
30
40
50
0.2
0.4
0.6
0.8
1.0
1.2
1.4
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
2500
2000
1500
1000
500
12
10
8
C
iss=Cgs+Cgd(Cds=shorted)
C
oss=Cds+Cgd
Crss=Cgd
VDS = 15V
VDS = 24V
※ Notes :
1. VGS = 0V
2. f=1MHz
C
iss
6
Coss
4
2
Crss
※ Note : ID = 10 A
30 35
0
0
0
5
10
15
20
25
0
5
10
15
20
25
40
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
3/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.