PRELIMINARY
SemiWell Semiconductor
SFS4410
Logic N-Channel MOSFET
Features
Symbol
■ RDS(on) (Max 0.0135Ω )@VGS=10V
RDS(on) (Max 0.020Ω )@VGS=4.5V
D
D
D
D
G
5
6
7
8
4
3 S
■ Gate Charge (Typical 33nC)
■ Maximum Junction Temperature Range (150°C)
■ Available in Tape and Reel
2
S
1
S
General Description
8-SOIC
This Power MOSFET is produced using Semiwell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics.This Power MOSFET is well suited
for power management circuit or DC-DC converter.
D
D
D
D
G
S
S
S
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
30
Units
Drain to Source Voltage
V
A
A
V
Continuous Drain Current(@TA = 25°C)
Drain Current Pulsed
10
IDM
(Note 1)
50
VGS
Gate to Source Voltage
±20
2.5
Total Power Dissipation Single Operation (TA=25°C)
Total Power Dissipation Single Operation (TA=70°C)
Operating Junction Temperature & Storage Temperature
W
W
°C
PD
1.6
T
STG, TJ
- 55 ~ 150
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
TL
300
°C
Thermal Characteristics
Value
Typ.
Symbol
Parameter
Units
Min.
Max.
Thermal Resistance, Junction-to-Ambient
RθJA
-
-
50
°C/W
(Note 4)
January, 2003. Rev. 0.
1/6
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
