SFS4410
Electrical Characteristics ( TJ = 25 °C unless otherwise noted )
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0V, ID = 250uA
D = 250uA, referenced to 25 °C
Drain-Source Breakdown Voltage
30
-
-
-
-
V
Δ BVDSS
Δ TJ
/
Breakdown Voltage Temperature
coefficient
I
12
mV/°C
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55 °C
1
10
IDSS
Drain-Source Leakage Current
-
-
uA
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
100
nA
nA
IGSS
-
-
-
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250uA
Gate Threshold Voltage
1.0
V
V
GS = 10 V, ID = 10A
Static Drain-Source On-state
Resistance
-
-
0.011 0.0135
RDS(ON)
Ω
VGS = 4.5 V, ID = 9A
0.016
0.020
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
1100
550
150
-
-
-
pF
Coss
Crss
Output Capacitance
V
GS =0 V, VDS =15V, f = 1MHz
Reverse Transfer Capacitance
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
-
-
-
-
-
-
13
30
25
60
260
120
43
-
VDD = 25V, ID = 1A, RG = 50Ω
Rise Time
ns
VGS = 10 V
Turn-off Delay Time
Fall Time
165
65
(Note 2,3)
Qg
Total Gate Charge
Gate-Source Charge
33
V
DS = 15V, VGS = 10V, ID = 10A
Qgs
5.2
nC
Qgd
Gate-Drain Charge(Miller Charge)
-
8
-
(Note 2,3)
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Parameter
Continuous Source Diode Forward Current
Test Conditions
Min.
-
Typ.
-
Max.
2.1
Unit.
A
VSD
Diode Forward Voltage
IS = 2.1A, VGS =0V
(Note 2)
-
-
1.2
V
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
3. Essentially independent of operating temperature.
2
4. Surface mounted on 1 inch Cu board.
2/6
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