SCP12C60
Fig 1. Gate Characteristics
Fig 2. Maximum Case Temperature
140
10
1
V
GM
(5V)
P
GM
(5W)
Max. Allowable Case Temperature [ C]
o
120
θ
= 180
100
o
Gate Voltage [V]
I
GM
(2A)
10
0
P
G(AV)
(0.5W)
25 C
o
80
π
θ
2
π
60
360°
θ
40
0
: Conduction Angl e
V
GD
(0.2V)
10
-1
10
-1
10
0
10
1
10
2
10
3
10
4
1
2
3
4
5
6
7
8
9
Gate Current [mA]
Average On-State Current [A]
Fig 3. Typical Forward Voltage
10
3
Fig 4. Thermal Response
10
1
Transient Thermal Impedance [ C/W]
o
10
0
On-State Current [A]
10
2
125 C
o
10
-1
10
1
10
-2
25 C
o
10
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
On-State Voltage [V]
Time (sec)
Fig 5. Typical Gate Trigger Voltage vs.
Junction Temperature
10
10
Fig 6. Typical Gate Trigger Current vs.
Junction Temperature
V
GT
(25
o
C)
V
GT
(t C)
I
GT
(25 C)
I
GT
(t C)
o
o
o
1
1
0.1
-50
0
50
100
o
150
0.1
-50
0
50
100
o
150
Junction Temperature[ C]
Junction Temperature[ C]
3/5
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
