SemiWell
Semiconductor
SCP12C60
Symbol
3. Gate
○
○
Silicon Controlled Rectifiers
▼
1
23
Features
Repetitive Peak Off-State Voltage : 600V
◆
R.M.S On-State Current ( I
T(RMS)
= 12 A )
◆
Low On-State Voltage (1.3V(Typ.)@ I
TM
)
◆
Non-iosolated Type
◆
○
2. Anode
1. Cathode
TO-220
General Description
Standard gate triggering SCR is suitable for the application where
requiring high bidirectional blocking voltage capability and also
suitable for over voltage protection ,motor control circuit in power
tool, inrush current limit circuit and heating control system.
Absolute Maximum Ratings
Symbol
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
di/dt
P
GM
P
G(AV)
I
FGM
V
RGM
T
J
T
STG
( T
J
= 25°C unless otherwise specified )
Condition
Ratings
600
Half Sine Wave : T
C
= 109 °C
180° Conduction Angle
1/2 Cycle, 60Hz, Sine Wave
Non-Repetitive
t = 8.3ms
7.6
12
132
87
50
5
0.5
2
5.0
- 40 ~ 125
- 40 ~ 150
Parameter
Repetitive Peak Off-State Voltage
Average On-State Current
R.M.S On-State Current
Surge On-State Current
I
2
t
for Fusing
Critical rate of rise of on-state current
Forward Peak Gate Power Dissipation
Forward Average Gate Power Dissipation
Forward Peak Gate Current
Reverse Peak Gate Voltage
Operating Junction Temperature
Storage Temperature
Units
V
A
A
A
A
2
s
A/
㎲
W
W
A
V
°C
°C
Aug, 2003. Rev. 3
1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights are reserved.
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