SCP12C60
Electrical Characteristics
Symbol
Items
V
AK
= V
DRM
T
C
= 25 °C
T
C
= 125 °C
I
TM
= 24 A
V
AK
= 6 V(DC), R
L
=10
Ω
I
GT
Gate Trigger Current (2)
T
C
= 25 °C
─
─
15
mA
tp=380
㎲
─
─
─
─
─
─
10
200
1.6
( T
C
= 25 °C unless otherwise noted )
Conditions
Ratings
Min.
Typ.
Max.
Unit
I
DRM
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
㎂
V
TM
V
V
D
= 6 V(DC), R
L
=10
Ω
V
GT
Gate Trigger Voltage (2)
T
C
= 25 °C
─
─
1.5
V
V
GD
dv/dt
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
V
AK
= 12 V, R
L
=100
Ω
T
C
= 125 °C
0.2
200
─
─
─
─
V
Linear slope up to V
D
= V
DRM
67%
,
Gate open
T
J
= 125°C
I
T
= 100mA, Gate Open
V/㎲
I
H
Holding Current
T
C
= 25 °C
─
─
20
mA
R
th(j-c)
R
th(j-a)
Thermal Impedance
Thermal Impedance
Junction to case
Junction to Ambient
─
─
─
─
1.3
60
°C/W
°C/W
※
Notes :
1. Pulse Width
≤
1.0 ms , Duty cycle
≤
1%
2. R
GK
Current not Included in measurement.
2/5
SEMIWELL [ SEMIWELL SEMICONDUCTOR ]
