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SWD2N60 参数 Datasheet PDF下载

SWD2N60图片预览
型号: SWD2N60
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道MOSFET (TO- 251 ,TO- 252) [N-channel MOSFET (TO-251 , TO-252)]
分类和应用:
文件页数/大小: 7 页 / 720 K
品牌: SEMIPOWER [ XIAN SEMIPOWER ELECTRONIC TECHNOLOGY CO., LTD. ]
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SAMWIN  
SW2N60  
Fig. 8. On resistance variation  
vs. junction temperature  
Fig 7. Breakdown Voltage Variation  
vs. Junction Temperature  
1.2  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
1.1  
1.0  
*. Notes :  
1. VGS = 0V  
0.9  
0.8  
*. Notes :  
1. VGS = 10V  
2. ID = 250uA  
2. ID = 2.0A  
-100  
-50  
0
50  
100  
150  
200  
-100  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
TJ, Junction Temperature [oC]  
Fig. 9. Maximum drain current vs.  
case temperature.  
Fig. 10. Maximum safe operating area  
101  
2.0  
1.5  
1.0  
0.5  
0.0  
Operation in This Area  
is Limited by R DS(on)  
100 s  
1 ms  
10 ms  
100  
10-1  
10-2  
DC  
*. Notes :  
1. TC = 25 O  
C
2. TJ = 150 O  
C
3. Single Pulse  
100  
101  
102  
103  
25  
50  
75  
100  
125  
150  
VDS, Drain-Source Voltage [V]  
TC' Case Temperature [oC]  
Fig. 11. Transient thermal response curve  
D=0.5  
100  
0.2  
*. Notes :  
1. Z¥èJC(t) = 2.58OC/W Max.  
2. Duty Factor, D=t1/t2  
0.1  
3. TJM - TC = PDM * Z¥èJC(t)  
0.05  
10-1  
0.02  
0.01  
t1  
single pulse  
t2  
10-2  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1, Square Wave Pulse Duration [sec]  
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.  
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