SAMWIN
SW2N60
Fig. 1. On-state characteristics
Fig. 2. Transfer characteristics
VGS
Top :
15.0 V
10.0 V
9.0 V
8.0 V
7.0 V
Bottom : 5.5 V
100
10-1
10-2
100
150oC
25oC
-55oC
*. Notes :
*. Notes :
1. VDS = 40V
2. TC = 25O
C
2. 250us Pulse Test
10-1
10-1
100
101
2
3
4
5
6
7
8
9
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig. 3. On-resistance variation vs.
Fig. 4. On state current vs.
diode forward voltage
drain current and gate voltage
12
10
8
VGS = 10V
150OC
25OC
100
6
VGS = 20V
4
2
*. Notes :
1. VGS = 0V
*. Note : TJ = 25OC
2. 250us Pulse Test
10-1
0.2
0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
1
2
3
4
5
6
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Fig. 5. Capacitance characteristics
(Non-Repetitive)
Fig. 6. Gate charge characteristics
500
12
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
VDS = 300V
VDS = 480V
Crss=Cgd
10
400
*. Notes :
1. VGS = 0V
8
2. f=1MHz
300
Ciss
6
4
2
0
200
Coss
100
Crss
*. Note : ID = 2.0A
0
5
10
15
20
25
30
35
40
0
1
2
3
4
5
6
7
8
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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