SAMWIN
SW2N60
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max. Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
600
-
-
-
-
V
ΔBVDSS Breakdown voltage temperature
ID=250uA, referenced to 25oC
0.65
V/oC
/ ΔTJ
coefficient
VDS=600V, VGS=0V
VDS=480V, TC=125oC
VGS=30V, VDS=0V
VGS=-30V, VDS=0V
-
-
-
-
-
-
-
-
1
uA
uA
nA
nA
IDSS
Drain to source leakage current
10
100
-100
Gate to source leakage current, forward
Gate to source leakage current, reverse
IGSS
On characteristics
VGS(TH) Gate threshold voltage
RDS(ON) Drain to source on state resistance
Dynamic characteristics
VDS=VGS, ID=250uA
VGS=10V, ID = 1A
2.0
-
4.0
5
V
4
Ω
Ciss
Coss
Crss
td(on)
tr
Input capacitance
-
-
-
-
-
-
-
-
-
-
520
50
12
35
55
70
40
20
-
Output capacitance
Reverse transfer capacitance
Turn on delay time
Rising time
VGS=0V, VDS=25V, f=1MHz
pF
ns
VDS=300V, ID=2.0A, RG=25Ω
td(off)
tf
Turn off delay time
Fall time
Qg
Total gate charge
Gate-source charge
Gate-drain charge
7.5
1.2
3
Qgs
Qgd
VDS=480V, VGS=10V, ID=2.0A
nC
-
Source to drain diode ratings characteristics
Symbol
Parameter
Continuous source current
Pulsed source current
Test conditions
Min.
Typ.
Max. Unit
IS
-
-
-
-
-
-
-
2.0
8.0
1.5
-
A
A
Integral reverse p-n Junction
diode in the MOSFET
ISM
VSD
Diode forward voltage drop.
Reverse recovery time
IS=2.0A, VGS=0V
-
V
Trr
590
1.0
ns
nC
IS=2.0A, VGS=0V,
dIF/dt=100A/us
Qrr
Breakdown voltage temperature
-
※. Notes
1.
2.
3.
4.
5.
Repeatitive rating : pulse width limited by junction temperature.
L = 75mH, IAS = 2.0A, VDD = 50V, RG=50Ω, Starting TJ = 25oC
ISD ≤ 2.0A, di/dt = 300A/us, VDD ≤ BVDSS, Staring TJ =25oC
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
Essentially independent of operating temperature.
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