Typical Characteristics (continued)
1.2
1.1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.0
※ Note :
1. VGS=0V
2. ID=250㎂
0.9
0.8
*
Note :
1. VGS = 10 V
2. ID = 3.5 A
-100
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
102
101
100
7
6
5
4
3
2
1
0
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
-1
10
* Notes :
1. TC = 25 o
C
2. TJ = 150 o
C
3. Single Pulse
-2
10
100
101
102
103
25
50
75
100
125
150
TC, Case Temperature [ ℃]
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
100
D=0.5
※ Notes :
1. Zθ (t) = 2.6 ℃/W M a x .
0.2
0.1
JC
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zθ (t)
JC
0.05
-1
10
0.02
0.01
PDM
t1
single pulse
t2
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
100
101
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎ SEMIHOW REV.A0,Dec 2005