Typical Characteristics
V
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
5.0V
101
100
10-1
101
100
10-1
Bottem
150℃
25℃
※ Note :
1. 250㎲ Pulse Test
2. TC=25℃
※ Note :
1. VDS=40V
2. 250㎲ Pulse Test
-55℃
10-1
100
VDS, Drain-Source Voltage [V]
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
5
4
3
2
1
0
101
100
10-1
V
GS=10V
VGS=20V
150℃
25℃
※ Note :
1. VGS=0V
2. 250㎲ Pulse Test
※ Note : TJ=25℃
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0
5
1 0
1 5
2 0
2 5
VSD, Source-Drain Voltage [V]
ID, Drain Current [A]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2400
2100
1800
1500
1200
900
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
V
DS = 120V
DS = 300V
DS = 480V
C
V
V
C
iss
6
Coss
* Note ;
1. VGS = 0 V
4
600
2. f = 1 MHz
C
rss
2
300
* Note : ID = 7.0A
0
0
10
-1
100
101
0
4
8
12
16
20
24
28
32
36
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
