Dec 2005
BVDSS = 600 V
DS(on) typ = 0.96 Ω
R
HFS7N60
600V N-Channel MOSFET
ID = 7.0 A
TO-220F
FEATURES
1
2
3
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 30 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 0.96 Ω (Typ.) @VGS=10V
100% Avalanche Tested
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
TC=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
V
VDSS
Drain-Source Voltage
Drain Current
600
7.0*
4.4*
28*
±30
420
7.0
ID
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
A
Drain Current
A
IDM
VGS
EAS
IAR
Drain Current
– Pulsed
(Note 1)
A
Gate-Source Voltage
V
Single Pulsed Avalanche Energy
Avalanche Current
(Note 2)
(Note 1)
(Note 1)
(Note 3)
mJ
A
EAR
dv/dt
PD
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25℃)
14.7
5.5
mJ
V/ns
48
0.38
W
W/℃
℃
- Derate above 25℃
Operating and Storage Temperature Range
TJ, TSTG
TL
-55 to +150
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
300
℃
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol
Parameter
Typ.
Max.
Units
RθJC
RθJA
Junction-to-Case
--
--
2.6
℃/W
Junction-to-Ambient
62.5
◎ SEMIHOW REV.A0,Dec 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
