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HFP640 参数 Datasheet PDF下载

HFP640图片预览
型号: HFP640
PDF下载: 下载PDF文件 查看货源
内容描述: 200V N沟道MOSFET [200V N-Channel MOSFET]
分类和应用:
文件页数/大小: 8 页 / 309 K
品牌: SEMIHOW [ SEMIHOW CO.,LTD. ]
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Typical Characteristics (continued)  
1.2  
1.1  
1.0  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
* Note :  
1. VGS = 0 V  
0.9  
Note :  
1. VGS = 10 V  
2. ID = 250 μA  
2. ID = 1.0 A  
0.8  
-100  
-100  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
200  
TJ, Junction Temperature [oC]  
T, Junction Temperature [oC]  
J
Figure 8. On-Resistance Variation  
vs Temperature  
Figure 7. Breakdown Voltage Variation  
vs Temperature  
20  
16  
12  
8
Operation in This Area  
is Limited by R DS(on)  
102  
101  
100  
10-1  
10-2  
100 μs  
1 ms  
10 ms  
100 ms  
DC  
* Notes :  
4
1. TC = 25 o  
C
2. TJ = 150 o  
C
3. Single Pulse  
0
25  
100  
101  
102  
50  
75  
100  
125  
150  
TC, Case Temperature []  
VDS, Drain-Source Voltage [V]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs Case Temperature  
1 0 0  
D = 0 .5  
0 .2  
N o te s  
:
1 0 -1  
1 . Z θ (t)  
=
0 .9 /W M a x .  
2 . D u ty F a c to r, D = t1 /t2  
3 . T JM T C P D M Z θ (t)  
JC  
0 .1  
-
=
*
JC  
0 .0 5  
0 .0 2  
0 .0 1  
PDM  
t1  
1 0 -2  
s in g le p u ls e  
t2  
1 0 -5  
1 0 -4  
1 0 -3  
1 0 -2  
1 0 -1  
1 0 0  
1 0 1  
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]  
Figure 11. Transient Thermal Response Curve  
◎ SEMIHOW REV.A0,July 2005  
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