Electrical Characteristics TC=25 °C unless otherwise specified
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
On Characteristics
VGS
--
Gate Threshold Voltage
V
DS = VGS, ID = 250 ㎂
2.0
--
4.0
V
RDS(ON) Static Drain-Source
On-Resistance
VGS = 10 V, ID = 9.0 A
0.145 0.18
Ω
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 ㎂
200
--
--
--
--
V
ΔBVDSS Breakdown Voltage Temperature
ID = 250 ㎂, Referenced to25℃
0.2
V/℃
/ΔTJ
Coefficient
IDSS
V
DS = 200 V, VGS = 0 V
--
--
--
--
1
㎂
㎂
Zero Gate Voltage Drain Current
VDS = 160 V, TC = 125℃
10
IGSSF
IGSSR
Gate-Body Leakage Current,
Forward
V
GS = 30 V, VDS = 0 V
GS = -30 V, VDS = 0 V
--
--
--
--
100
㎁
㎁
Gate-Body Leakage Current,
Reverse
V
-100
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
1300 1700
㎊
㎊
㎊
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
Output Capacitance
175
26
230
34
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Time
--
--
--
--
--
--
--
20
150
150
110
37
40
300
300
220
48
㎱
㎱
VDS = 100 V, ID = 18 A,
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
RG = 25 Ω
㎱
(Note 4,5)
㎱
Qg
Qgs
Qgd
nC
nC
nC
VDS = 160 V, ID = 18 A,
VGS = 10 V
5.5
13
--
(Note 4,5)
--
Source-Drain Diode Maximum Ratings and Characteristics
IS
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
--
--
--
--
--
--
--
18
72
1.5
--
A
ISM
VSD
trr
Source-Drain Diode Forward Voltage IS = 18 A, VGS = 0 V
--
V
Reverse Recovery Time
IS = 18 A, VGS = 0 V
200
1.50
㎱
μC
diF/dt = 100 A/μs (Note 4)
Reverse Recovery Charge
--
Qrr
Notes ;
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1.16mH, IAS=18A, VDD=50V, RG=25Ω, Starting TJ =25°C
3. ISD≤18A, di/dt≤300A/μs, VDD≤BVDSS , Starting TJ =25 °C
4. Pulse Test : Pulse Width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature
◎ SEMIHOW REV.A0,July 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
