Typical Characteristics
VGS
Top:
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
※ Notes
※ Notes
1. 250us Pulse Test
2. Tc=25℃
1. VDS=40V
2. 250us Pulse Test
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
※ Notes
1. VGS=0V
2. 250us Pulse Test
※ Notes : TJ=25℃
ID, Drain Current [A]
VSD, Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
2500
2000
1500
1000
500
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = Cgd
C
VDS = 40V
VDS = 100V
C
iss
VDS = 160V
6
Coss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
4
C
2
rss
* Note : ID = 18.0 A
0
10
0
-1
100
101
0
8
16
24
32
40
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎ SEMIHOW REV.A0,July 2005
SEMIHOW [ SEMIHOW CO.,LTD. ]
